Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures

Abstract

Electron transport properties of strained-Si on relaxed Si_{1 – x}Ge_x channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.