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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 387-391
http://dx.doi.org/10.1155/1998/49783

Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times

Institut für Theoretische Elektrotechnik und Mikroelektronik, Universität Bremen, Kufsteiner Strasse, Postfach 33 04 40, Bremen 28334, Germany

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL.2) Modeling of the relaxation times τ(x,TC,TL) by splines.