Abstract
Good agreement between a hydrodynamic and a Monte-Carlo device model is
demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor.
This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model
under homogeneous conditions) of the relaxation times τ at discrete points of the
parameter space spanned by the Ge-content x, doping density N, carrier temperature