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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 401-405
http://dx.doi.org/10.1155/1998/53546

Monte Carlo Simulations of High Field Transport in Electroluminescent Devices

1Department of Electrical Engineering, Arizona State University, Tempe 85287-5706, AZ, USA
2Universität Rostock, Fachbereich Physik, Universitätsplatz 3, Rostock D-18051, Germany

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1–3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.