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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 29-34
http://dx.doi.org/10.1155/1998/61608

Two-dimensional Modelling of HEMTs Using Multigrids with Quantum Correction

1Department of Applied Mathematics, University of Leeds, Leeds LS2 9JT, UK
2School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
3Centre for Nano-Device Modelling, University of Leeds, Leeds LS2 9JT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The two-dimensional multi-layered HEMT is modelled isothermally by solving the Poisson and current continuity equations consistently with the Schrödinger equation. A multigrid method is used on the Poisson and current continuity equations while the electron density is calculated at each level by solving the Schrödinger equation in onedimensional slices perpendicular to the layer structure. A correction factor is introduced which enables relatively accurate solutions to be obtained using a low number of eigensolutions. A novel method for discretising the current density which can be generalised to the non-isothermal case is described. Results are illustrated using a two layer AlGaAs-GaAs HEMT.