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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 53-58
http://dx.doi.org/10.1155/1998/69743

Modeling of Thermal Effects in Semiconductor Structures

Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK

Copyright © 1998 Hindawi Publishing Corporation.

Abstract

A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.