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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 469-473
http://dx.doi.org/10.1155/1998/78272

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations

INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, Roma 00133, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.