About this Journal Submit a Manuscript Table of Contents
VLSI Design
Volume 8 (1998), Issue 1-4, Pages 343-347
http://dx.doi.org/10.1155/1998/80689

Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

1II. Phys. Inst., University of Köln, Zülpicher Str. 77, Köln D-50937, Germany
2Intel Corporation, RA1-309, 5200 N.E. Elam Young Parkway, Hillsboro, OR 97124-6497, USA
3Beckman Institute, University of Illinois at Urbana-Champaign, 405 N. Mathews Avenue, Urbana, IL 61801, USA

Copyright © 1998 Hindawi Publishing Corporation.

Abstract

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.