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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 481-487
http://dx.doi.org/10.1155/1998/81936

Transverse Patterns in the Bistable Resonant Tunneling Systems Under Ballistic Lateral Transport

1Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Pr. Nauki 45, Kiev 252028, Ukraine
2Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We report the theoretical investigation of the phenomenon of the formation of patterns transverse to the tunneling current in resonant tunneling double-barrier heterostructures in the case of wide range of bistable voltages. In contrast to the case of the patterns in the structures with small region of bistability, for pronounced bistability electron lateral transport is strongly nonlocal. We performed numerical simulations of the stationary and mobile patterns using special variational procedure. Our results revealed that though the possible types of patterns remains the same as for the structures with small bistability region, their characteristics are modified considerably.