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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 219-223
http://dx.doi.org/10.1155/1998/83017

Single-Electron Memories

Institute for Microelectronics, TU-Vienna Gusshausstrasse 27-29/E360, A-1040 Wien, Austria

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.