- About this Journal
- Abstracting and Indexing
- Aims and Scope
- Article Processing Charges
- Articles in Press
- Author Guidelines
- Bibliographic Information
- Citations to this Journal
- Contact Information
- Editorial Board
- Editorial Workflow
- Free eTOC Alerts
- Publication Ethics
- Reviewers Acknowledgment
- Submit a Manuscript
- Subscription Information
- Table of Contents
VLSI Design
Volume 8 (1998), Issue 1-4, Pages 219-223
doi:10.1155/1998/83017
Single-Electron Memories
Institute for Microelectronics, TU-Vienna Gusshausstrasse 27-29/E360, A-1040 Wien, Austria
Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.