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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 99-103
http://dx.doi.org/10.1155/1998/85325

3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Scotland, Glasgow G12 8LT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this paper we describe the use of 3D parallel finite element solution of the Poisson equation to calculate the in-cell breakdown voltage in lateral channel IGBTs. The solver is based on topologically rectangular grids, and uses a domain decomposition approach to partition the problem on an array of mesh connected processors. A parallel BiCGSTAB solver has been developed to solve the Possion equation. Hole and electron ionisation integrals are calculated to determine the breakdown voltage. The effects of varying the doping concentration in the n base region and stopper surface concentration are investigated.