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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 393-399
http://dx.doi.org/10.1155/1998/96170

Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model

1P.O. Box 15600, Department of Electrical Engineering, Northern Arizona University, Flagstaff 86011-5600, AZ, USA
2Department of Electrical Engineering, University of Kentucky, 453 Anderson Hall, Lexington 40506-0046, KY, USA
3Department of Mechanical Engineering, University of Kentucky, 514h Ctr for Robotics and Mfg Systems, Lexington 40506-0108, KY, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Elizabeth J. Brauer, Marek Turowski, and James M. McDonough, “Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model,” VLSI Design, vol. 8, no. 1-4, pp. 393-399, 1998. doi:10.1155/1998/96170