About this Journal Submit a Manuscript Table of Contents
VLSI Design
Volume 9 (1999), Issue 4, Pages 351-355
http://dx.doi.org/10.1155/1999/76568

Theory and Simulation of the Smooth Quantum Hydrodynamic Model

Department of Mathematics, Arizona State University, Tempe 85287-1804, AZ, USA

Received 13 August 1997; Revised 1 December 1998

Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The “smooth” quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O(ħ2) QHD model. In addition, smooth QHD simulations of a classical electron shock wave are presented which agree with classical hydrodynamic model simulations and which do not exhibit the spurious dispersive oscillations of the O(ħ2) QHD model.