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VLSI Design
Volume 10 (2000), Issue 4, Pages 335-354
http://dx.doi.org/10.1155/2000/82945

Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon

1Dipartimento di Matematica, Universita' di Catania, Viale Andrea Doria 6, Catania 95125, Italy
2Dipartimento Interuniversitario di Matematica, Politecnico di Bari, Via E. Orabona 4, Bari 70125, Italy

Received 16 December 1998; Accepted 14 December 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Balance equations based on the moment method for the transport of electrons in silicon semiconductors are presented. The energy band is assumed to be described by the Kane dispersion relation. The closure relations have been obtained by employing the maximum entropy principle.

The validity of the constitutive equations for fluxes and production terms of the balance equations has been checked with a comparison to detailed Monte Carlo simulations in the case of bulk silicon.