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VLSI Design
Volume 10 (2000), Issue 4, Pages 453-466
http://dx.doi.org/10.1155/2000/94851

Analytical and Computational Advances for Hydrodynamic Models of Classical and Quantum Charge Transport

Department of Mathematics, Northwestern University, Evanston, IL 60208, USA

Received 16 December 1998; Accepted 14 December 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In recent years, substantial advances have been made in understanding hydrodynamic models, both from the standpoint of analytical infrastructure, as well as the parameters which play a decisive effect in the behavior of such models. Both classical and quantum hydrodynamic models have been studied in depth. In this survey paper, we describe several results of this type. We include, for example, well-posedness for both classical and quantum reduced models, and the relaxation drift–diffusion limit as examples of analytical results. As examples of computational results, we include some discussion of effective algorithms, but most importantly, some information gleaned from extensive simulation. In particular, we present our findings of the prominent role played by the mobilities in the classical models, and the role of hysteresis in the quantum models. All models are self-consistent. Included is discussion of recent analytical results on the use of Maxwell’s equations. Benchmark devices are utilized: the MESFET transistor and the n+/n/n+ diode for classical transport, and the resonant tunneling diode for quantum transport. Some comparison with the linear Boltzmann transport equation is included.