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VLSI Design
Volume 12 (2001), Issue 3, Pages 407-414
http://dx.doi.org/10.1155/2001/16935

A Low-Voltage Floating-Gate MOS Biquad

Instituto de Microelectrónica de Sevilla (IMSE), Centro Nacional de Microelectrónica (CNM), Edificio CICA, Avda. Reina Mercedes s/n, Sevilla 41012, Spain

Received 20 June 2000; Revised 3 August 2000

Copyright © 2001 Hindawi Publishing Corporation.

Abstract

A second-order gm-C filter based on the Floating-Gate MOS (FGMOS) technique is presented. It uses a new fully differential transconductor and works at 2 V of voltage supply with a full differential input linear range and a THD below 1%. Programming and tuning are performed by means of a single voltage signal. The transconductor incorporates a novel Common-Mode Feedback Circuit (CMFB) based also on FGMOS transistors.