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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 57-61
http://dx.doi.org/10.1155/2001/27920

Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method

1lnstitute for Algorithm and Scientific Computing (SCAI), GMD-German National Research Center for Information Technology Sehloß Birlinghoven, Sankt Augustin 53754, Germany
2II. Physikalisches Institut, Universität Köln, Zülpicher Str. 77, Köln 50937, Germany
3Beckman Institute, University of Illinois, Urbana/Champaign, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The Local Iterative Monte Carlo technique (LIMO) is used for an effective simulation of hot electron distributions in silicon MOSFETs. This new Monte Carlo approach yields an efficient use of the computational resources due to a different iteration scheme. In addition the necessary computation time can be further reduced by a reuse of the computational expensive MC step simulation results in the iteration process. The later possibility is investigated in detail in this work. Results for short channel MOSFETs demonstrates that correct two-dimensional hot electron distributions can be calculated by LIMO within 1 hour on a standard work station.