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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 15-21
http://dx.doi.org/10.1155/2001/62398

Quantum Corrections to the ‘Atomistic’ MOSFET Simulations

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK

Copyright © 2001 Hindawi Publishing Corporation.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Antonio J. García-Loureiro, Karol Kalna, and Asen Asenov, “Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator,” 2007 Spanish Conference on Electron Devices, Proceedings, pp. 60–63, 2007. View at Publisher · View at Google Scholar
  • A. García-Loureiro, M. Aldegunde, N. Seoane, K. Kalna, and A. Asenov, “3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs,” Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, pp. 200–203, 2009. View at Publisher · View at Google Scholar