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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 169-173
http://dx.doi.org/10.1155/2001/63643

Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK

Copyright © 2001 Hindawi Publishing Corporation.

How to Cite this Article

J. R. Watling, Y. P. Zhao, A. Asenov, and J. R. Barker, “Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs,” VLSI Design, vol. 13, no. 1-4, pp. 169-173, 2001. doi:10.1155/2001/63643