Abstract
As MOSFET devices within the deep sub-micron regime are modelled, it is no longer feasible to represent the charged dopants by a continuous charge distribution. In this regime an ensemble of devices, each with different spatial distributions and the number of dopants, must be modelled. However, it is computationally prohibitive to solve for the full Coulomb interaction required for particle simulators, especially for an ensemble of devices. To address this point, the paper focuses on the issue of modelling the dynamics in the presence of discrete carrier–carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.