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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 175-178
http://dx.doi.org/10.1155/2001/68217

Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique

1II. Phys. Inst., Universität Köln, Zülpicher Str. 77, Köln 50937, Germany
2lnstitute for Algorithm and Scientific, Computing (SCAI), GMD-German National Research Center for Information Technology, Schloß Birlinghoven, Sankt Augustin 53754, Germany
3Beckman Institute, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA

Copyright © 2001 Hindawi Publishing Corporation.

Abstract

The effects of electron–electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron–electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.