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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 175-178
http://dx.doi.org/10.1155/2001/68217

Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique

1II. Phys. Inst., Universität Köln, Zülpicher Str. 77, Köln 50937, Germany
2lnstitute for Algorithm and Scientific, Computing (SCAI), GMD-German National Research Center for Information Technology, Schloß Birlinghoven, Sankt Augustin 53754, Germany
3Beckman Institute, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The effects of electron–electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron–electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.