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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 51-56
http://dx.doi.org/10.1155/2001/70635

Cluster-based Parallel 3-D Monte Carlo Device Simulation

1Beckman Institute, Dept. of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana 61801, IL, USA
23255 Beckman Institute, University of Illinois at Urbana-Champaign, 405 N. Mathews Avenue, Urbana 61801, IL, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The recent improvements in the performance of commodity computer have created very favorable conditions for building high performance parallel machines from computer clusters. These are very attractive for 3-D device simulation, necessary to model properly carrier-carrier interaction and granular doping effects in deeply scaled silicon devices. We have developed a parallel 3-D Monte Carlo simulation environment customized for clusters using the Message Passing Library (MPI). The code has been tested on the supercluster of NCSA at the University of Illinois. We present here test results for an n-i-n diode structure, along with an analysis of performance for two different domain decomposition schemes.