Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices

Abstract

Much of the potential of SiGe for p-MOSFET application is reduced by the lower than expected hole mobilities which are likely to be lowered by interface roughness scattering. The present paper analyses a hitherto unrecognised enhancement of interface scattering and trapping process which arises from the complex hole dynamics in the warped heavy hole band.