Abstract
With the progress of integrated technology, the feature size of experimental electron devices have already been scaled down deeply into the sub–0.1 μm region. For such ultra-small devices, it is increasingly important to take quantum mechanical effects into account for device simulation. In this paper, we present a new approach for quantum modeling, applicable to multi-dimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum effects such as tunneling and quantum confinement effects can be incorporated in the standard Monte Carlo techniques.