VLSI Design
Volume 2009 (2009), Article ID 803974, 9 pages
doi:10.1155/2009/803974
Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Mohammad Javad Sharifi1 and Davoud Bahrepour2

1Department of Electrical and Computer Engineering, Shahid Beheshti University, 14966-47535 Tehran, Iran
2Science and Research Branch, Islamic Azad University, 14966-47535 Tehran, Iran

Received 20 November 2008; Revised 29 April 2009; Accepted 3 June 2009

Academic Editor: Ayman Fayed

Copyright © 2009 Mohammad Javad Sharifi and Davoud Bahrepour. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Mohammad Javad Sharifi and Davoud Bahrepour, “A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor,” VLSI Design, vol. 2009, Article ID 803974, 9 pages, 2009. doi:10.1155/2009/803974