]>A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor : Figure 10
803974.fig.0010a
(a)
803974.fig.0010b
(b)
Figure 10: (a) Summation of power of sources in the circuit including input waveform generators and bias sources ( 𝐶 𝐿 = 1 𝑓 𝐹 ). (b) Integral of total, that is, static and dynamic, power consumption for power of sources (see (3)). The input waveforms are same as Figure 9(a).