]>A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor : Figure 5
803974.fig.005a
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803974.fig.005b
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Figure 5: (a) Interior design circuit for modeling RTHEMT. The HEMT characteristics are: Level = 2, 𝑉 T O = 0 . 2 , 𝐾 𝑝 = 2 6 0 𝑒 − 6 , G a m m a = 2 and L a m b d a = 0 . 0 8 . The RTD characteristics are: P/V ratio of 8 ∶ 1 at room temperature, the peak current density is 6 2 K A / c m 2 and the area is 0.145  𝜇 m2. (b) Solid line and dotted lines show a RTD and a FET I-V characteristic respectively. At certain 𝑉 g g the RTD curve intersects with the saturation FET curve in only one point (point A) which results in the flat current.