A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications

<table>Output voltage versus resistance of the sensor at different gains.  (quarter-bridge configuration, <math id="M66" xmlns="http://www.w3.org/1998/Math/MathML"><mtext>temp</mtext><mo>=</mo><mi>  </mi><mo>-</mo><msup><mrow><mn>180</mn></mrow><mrow><mo>°</mo></mrow></msup></math>C).</table>

VLSI Design

fig19

Figure 19

Figure 19: A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications 