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VLSI Design
/
2011
/
Article
/
Fig 2
/
Review Article
Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications
Figure 2
Scaling trend of power supply voltage
(
𝑉
d
d
)
, threshold voltage
(
𝑉
t
h
)
, and gate oxide thickness
(
𝑇
o
x
)
as a function of CMOS channel length [
5
].