|
Range of
operation | Performance factors | Challenges | Technique/Solution | Enhanced performance | Applications |
|
| Sub-50 nm | Loss of drive current and enhancement in SCE | Voltage scaling limitation, scaling | Nonuniform doping profile (SSR)
Lateral channel engineering | High linear current 50 mV drain bias, exhibit smaller roll-off, currents less than UD devices | HP [26] |
|
| Sub-50 nm | Revere-biased diode junc. BTBT current | Reduce BTBT | Reduce peak halo doping conc.
Asymmetric halo (AH) doping | Dissipates less static power in circuits, improvement in performance | LOP-LSTP [32] |
|
| Sub-50 nm | Large variation in different leakage components due to variation in device parameters | variability, due to random dopant fluctuation and junction capacitance | Increase in strength of halo
Modified AH halo | Min jn. BTBT and highest performance for a given subthreshold leakage, reduces subthreshold leakage, improves SCE | LOP [26] |
|
| Sub-50 nm | Adverse roll-off | DIBL | High halo doping on source side
Non uniform doping | drop as a result of DIBL effect is reduced | LOP [32] |
|
| Sub-50 nm | Roll off of short channel and gate/drain leakage | BTBT control, roll-off | Halo to extension spacing
Implant localized halo beneath the channel surface | Sub-50-nm bulk MOSFET devices can be achieved with small roll-off, low DIBL, suitable | LOP [35] |
|
| Sub-50 nm | Net doping conc. decreases laterally with a slope of 4-5 nm/dec, difficult to use superhalo tech. for PMOS | Acceptable short channel effects | Lat. conc. dis. of B, Ar, p+ optimized poly-Si gate
Lateral net doping profile in SALVO design | Produces PMOS devices with lateral net doping slope as abrupt as 6 nm/dec for a metal gate, 8.5 nm/dec for a poly Si gate down to 25 nm | LSTP [29] |
|
| Sub-22 nm | Metal gate work function affects of device and tuning and power of digital circuits | Intrinsic parameter fluctuations | Metal gate technology
High-k dielectrics | Intrinsic parameter fluctuations controlled | HP-LOP [24] |
|
| Sub-22 nm | Process variation effects, random dopant fluctuation affects of device | Intrinsic parameter fluctuation | Random variation of work function
Metal gate technology | Metal as a gate material introduces a new source of random variation due to the dependence of work functions on the orientation of metal grains | HP-LSTP [24] |
|
