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VLSI Design
Volume 2011 (2011), Article ID 548546, 9 pages
http://dx.doi.org/10.1155/2011/548546
Research Article

Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

1Key Laboratory of RF Circuit and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
2College of Electronic Science and Technology, Faculty of Electronic Information and Electric Engineering, Dalian University of Technology, Dalian 116024, China
3Hangzhou Hanan Semiconductor Co., Ltd., Hangzhou 310018, China

Received 26 March 2011; Revised 26 May 2011; Accepted 31 May 2011

Academic Editor: Ethan Farquhar

Copyright © 2011 Haipeng Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Haipeng Zhang, Ruisheng Qi, Liang Zhang, Buchun Su, and Dejun Wang, “Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity,” VLSI Design, vol. 2011, Article ID 548546, 9 pages, 2011. doi:10.1155/2011/548546