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Classical and Quantum Hydrodynamic Device Models and Energy Transport
Guest Editor: Joseph W. Jerome- Classical and Quantum Hydrodynamic Device Models and Energy Transport, Joseph W. Jerome
Volume 3 (1995), Issue 2, Pages 99-100 - Hydrodynamic Models of Semiconductor
Electron Transport at High Fields, M. G. Ancona
Volume 3 (1995), Issue 2, Pages 101-114 - On the Structure and Closure-Condition
of the Hydrodynamic Model, Massimo Rudan and Giorgio Baccarani
Volume 3 (1995), Issue 2, Pages 115-129 - The Response of the Hydrodynamic Model to Heat Conduction, Mobility, and Relaxation Expressions, Joseph W. Jerome and Chi-Wang Shu
Volume 3 (1995), Issue 2, Pages 131-143 - Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation, Zhangxin Chen, Bernardo Cockburn, Joseph W. Jerome, and Chi-Wang Shu
Volume 3 (1995), Issue 2, Pages 145-158 - 2-D Simulation of Quantum Effects in Small
Semiconductor Devices Using Quantum
Hydrodynamic Equations, Jing-Rong Zhou and David K. Ferry
Volume 3 (1995), Issue 2, Pages 159-177 - Electron Transport Using the Quantum
Corrected Hydrodynamic Equations, J. P. Kreskovsky and H. L. Grubin
Volume 3 (1995), Issue 2, Pages 179-200 - Resonant Tunneling in the Quantum
Hydrodynamic Model, Carl L. Gardner
Volume 3 (1995), Issue 2, Pages 201-210 - Formulation of Macroscopic Transport
Models for Numerical Simulation
of Semiconductor Devices, Edwin C. Kan, Zhiping Yu, Robert W. Dutton, Datong Chen, and Umberto Ravaioli
Volume 3 (1995), Issue 2, Pages 211-224