Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

• Guest Editorial, John Barker
  Volume 13 (2001), Issue 1-4, Pages 1-2
• IWCE-7 Committees, John R. Barker and Asen Asenov
  Volume 13 (2001), Issue 1-4, Pages 3-3
• Simulating Quasi-ballistic Transport in Si Nanotransistors, Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, and Joseph W. Jerome
  Volume 13 (2001), Issue 1-4, Pages 5-13
• Quantum Corrections to the ‘Atomistic’ MOSFET Simulations, A. Asenov, G. Slavcheva, S. Kaya, and R. Balasubramaniam
  Volume 13 (2001), Issue 1-4, Pages 15-21
• Simulation of Optoelectronic Devices, Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, and Andrea Reale
  Volume 13 (2001), Issue 1-4, Pages 23-36
• Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser, E. Starikov, P. Shiktorov, V. Gružinskis, L. Reggiani, L. Varani, J. C. Vaissière, and Jian H. Zhao
  Volume 13 (2001), Issue 1-4, Pages 37-43
• Numerical Studies of Miniband Conduction in Quasi-One-Dimensional Superlattices, N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main
  Volume 13 (2001), Issue 1-4, Pages 45-50
• Cluster-based Parallel 3-D Monte Carlo Device Simulation, Asim Kepkep, Umberto Ravaioli, and Brian Winstead
  Volume 13 (2001), Issue 1-4, Pages 51-56
• Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method, Jürgen Jakumeit, Torsten Mietzner, and Umberto Ravaioli
  Volume 13 (2001), Issue 1-4, Pages 57-61
• Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys, Enrico Ghillino, Carlo Garetto, Michele Goano, Giovanni Ghione, Enrico Bellotti, and Kevin F. Brennan
  Volume 13 (2001), Issue 1-4, Pages 63-68
• Tight Binding Simulation of Quantum Transport in Interband Tunneling Devices, Matsuto Ogawa, Ryuichiro Tominaga, and Tanroku Miyoshi
  Volume 13 (2001), Issue 1-4, Pages 69-74
• Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics, W. J. Gross, D. Vasileska, and D. K. Ferry
  Volume 13 (2001), Issue 1-4, Pages 75-78
• A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices, Min Shen, Ming-C. Cheng, and J. J. Liou
  Volume 13 (2001), Issue 1-4, Pages 79-84
• Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices, P. Shiktorov, E. Starikov, V. Gruzinskis, T. GonzáLez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiére
  Volume 13 (2001), Issue 1-4, Pages 85-90
• Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures, Francesco Chirico, Aldo Di Carlo, and Paolo Lugli
  Volume 13 (2001), Issue 1-4, Pages 91-95
• Numerical Simulation of Quantum Logic Gates Based on Quantum Wires, A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, and S. Reggiani
  Volume 13 (2001), Issue 1-4, Pages 97-102
• 3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices, Thomas D. Linton Jr., Shaofeng Yu, and Reaz Shaheed
  Volume 13 (2001), Issue 1-4, Pages 103-109
• Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability, Amr Haggag, William McMahon, Karl Hess, Björn Fischer, and Leonard F. Register
  Volume 13 (2001), Issue 1-4, Pages 111-115
• Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials, K. F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P. P. Ruden, and Y. Zhang
  Volume 13 (2001), Issue 1-4, Pages 117-124
• Hybrid Particle-based Full-band Analysis of Ultra-small MOS, S. J. Wigger, S. M. Goodnick, and M. Saraniti
  Volume 13 (2001), Issue 1-4, Pages 125-129
• An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices, Ting-Wei Tang, Xinlin Wang, Haitao Gan, and Meikei Ieong
  Volume 13 (2001), Issue 1-4, Pages 131-134
• Theoretical Investigation of Ultrathin Gate Dielectrics, Alexander A. Demkov, Xiaodong Zhang, and Heather Loechelt
  Volume 13 (2001), Issue 1-4, Pages 135-143
• Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets, Xavier Oriols and Jordi Suñé
  Volume 13 (2001), Issue 1-4, Pages 145-148
• Simulation of a Complete Chain of QCA Cells with Realistic Potentials, M. Girlanda and M. Macucci
  Volume 13 (2001), Issue 1-4, Pages 149-153
• Simulation at the Start of the New Millenium: Crossing the Quantum-Classical Threshold, D. K. Ferry
  Volume 13 (2001), Issue 1-4, Pages 155-161
• Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs, F. M. Bufler, P. D. Yoder, and W. Fichtner
  Volume 13 (2001), Issue 1-4, Pages 163-167
• Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs, J. R. Watling, Y. P. Zhao, A. Asenov, and J. R. Barker
  Volume 13 (2001), Issue 1-4, Pages 169-173
• Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique, T. Mietzner, J. Jakumeit, and U. Ravaioli
  Volume 13 (2001), Issue 1-4, Pages 175-178
• Simulation of Biological Ionic Channels by Technology Computer-Aided Design, K. Hess, U. Ravaioli, M. Gupta, N. Aluru, van der Straaten, and R. S. Eisenberg
  Volume 13 (2001), Issue 1-4, Pages 179-187
• Analytic I–V Model for Single-Electron Transistors, Xiaohui Wang and Wolfgang Porod
  Volume 13 (2001), Issue 1-4, Pages 189-192
• Design Optimization of Coulomb Blockade Devices, H.-O. Müller, D. A. Williams, and H. Mizuta
  Volume 13 (2001), Issue 1-4, Pages 193-198
• A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces, J. R. Barker, J. R. Watling, and R. C. W. Wilkins
  Volume 13 (2001), Issue 1-4, Pages 199-204
• Scattered Packet Method for the Simulation of the Spatio-temporal Evolution of Local Perturbations, P. Gaubert, L. Varani, J. C. Vaissière, J. P. Nougier, E. Starikova, P. Shiktorov, and V. Gruzhinskis
  Volume 13 (2001), Issue 1-4, Pages 205-209
• Wigner Paths Method in Quantum Transport with Dissipation, P. Bordone, A. Bertoni, R. Brunetti, and C. Jacoboni
  Volume 13 (2001), Issue 1-4, Pages 211-220
• Wigner Function Methods in Modeling of Switching in Resonant Tunneling Devices, H. L. Grubin and R. C. Buggeln
  Volume 13 (2001), Issue 1-4, Pages 221-227
• Quantum Monte Carlo Study of Silicon Self-interstitial Defects, W.-K. Leung, R. J. Needs, G. Rajagopal, S. Itoh, and S. Ihara
  Volume 13 (2001), Issue 1-4, Pages 229-235
• A Simple Model for the Quantum Hydrodynamic Simulation of Electron Transport in Quantum Confined Structures in the Presence of Vortices, J. R. Barker
  Volume 13 (2001), Issue 1-4, Pages 237-244
• Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing, K. Horio, Y. Mitani, A. Wakabayashi, and N. Kurosawa
  Volume 13 (2001), Issue 1-4, Pages 245-249
• Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations, J. Kang, X. He, D. Vasileska, and D. K. Schroder
  Volume 13 (2001), Issue 1-4, Pages 251-256
• The Deterministic Circuit Model for Noise Influence on the Averaged Transient Responses of Large-scale Nonlinear ICs Analyzed with Itô's Stochastic Differential Equations, Magnus Willander, Yevgeny Mamontov, and Jonathan Vincent
  Volume 13 (2001), Issue 1-4, Pages 257-264
• Evaluation of an Equivalent Hole Effective Mass for Si/SiGe Structures, Salvador Rodríguez, J. Banqueri, and J. E. Carceller
  Volume 13 (2001), Issue 1-4, Pages 265-268
• Visualization of Large-scale Atomic Interactions During the Melting and Crystallization Process, Roman Ďurikovič
  Volume 13 (2001), Issue 1-4, Pages 269-271
• Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle, O. Muscato and V. Romano
  Volume 13 (2001), Issue 1-4, Pages 273-279
• Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation, C. Jungemann, B. Neinhüs, and B. Meinerzhagen
  Volume 13 (2001), Issue 1-4, Pages 281-285
• Hot Electron Modelling of HEMTs, Eric A. B. Cole, Christopher M. Snowden, and Shahzad Hussain
  Volume 13 (2001), Issue 1-4, Pages 287-293
• Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes, D. Oriato, Alison B. Walker, and W. N. Wang
  Volume 13 (2001), Issue 1-4, Pages 295-299
• Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's, A. Harkar, R. W. Kelsall, and J. N. Ellis
  Volume 13 (2001), Issue 1-4, Pages 301-304
• Electronic Transport in Self-organised Molecular Nanostructured Devices, A. Pecchia, B. Movaghar, R. W. Kelsall, A. Bourlange, S. D. Evans, B. J. Hickey, and N. Boden
  Volume 13 (2001), Issue 1-4, Pages 305-309
• Calculation of Transport Parameters of SiO₂ Polymorphs, Elena Gnani, Susanna Reggiani, Renato Colle, and Massimo Rudan
  Volume 13 (2001), Issue 1-4, Pages 311-315
• Measurement and Simulation of Boron Diffusivity in Strained Si₁ –_xGe_x Epitaxial Layers, K. Rajendran and W. Schoenmaker
  Volume 13 (2001), Issue 1-4, Pages 317-321
• 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors, M. Rousseau and J. C. De Jaeger
  Volume 13 (2001), Issue 1-4, Pages 323-328
• An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices, Min Shen, Wai-Kay Yip, Ming-C. Cheng, and J. J. Liou
  Volume 13 (2001), Issue 1-4, Pages 329-334
• Quantum Potential Approaches for Nano-scale Device Simulation, Hideaki Tsuchiya, Brian Winstead, and Umberto Ravaioli
  Volume 13 (2001), Issue 1-4, Pages 335-340
• Three-dimensional Spectral Solution of Schrödinger Equation , A. Trellakis and U. Ravaioli
  Volume 13 (2001), Issue 1-4, Pages 341-347
• Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode, Marcello A. Anile, Jose A. Carrillo, Irene M. Gamba, and Chi-Wang Shu
  Volume 13 (2001), Issue 1-4, Pages 349-354
• Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models, A. M. Anile, S. F. Liotta, G. Mascali, and S. Rinaudo
  Volume 13 (2001), Issue 1-4, Pages 355-361
• A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics, C. Pennetta, L. Reggiani, Gy. Trefán, R. Cataldo, and G. De Nunzio
  Volume 13 (2001), Issue 1-4, Pages 363-367
• Quantum Transport Modeling of Current Noise in Quantum Devices, Tanroku Miyoshi, Tetsuo Miyamoto, and Matsuto Ogawa
  Volume 13 (2001), Issue 1-4, Pages 369-373
• Dynamical Equation and Monte Carlo Simulation of the Two-time Wigner Function for Electron Quantum Transport, R. Brunetti, A. Bertoni, P. Bordone, and C. Jacoboni
  Volume 13 (2001), Issue 1-4, Pages 375-380
• Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices, M. Trovato and L. Reggiani
  Volume 13 (2001), Issue 1-4, Pages 381-386
• Microscopic Modeling of GaN-based Heterostructures, F. Sacconi, F. Della Sala, A. Di Carlo, and Paolo Lugli
  Volume 13 (2001), Issue 1-4, Pages 387-391
• Density-functional Based Tight-binding Calculations on Thiophene Polymorphism, J. Widany, G. Daminelli, A. Di Carlo, and P. Lugli
  Volume 13 (2001), Issue 1-4, Pages 393-397
• An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution, S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martin, and J. E. Velázquez
  Volume 13 (2001), Issue 1-4, Pages 399-404
• A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors, M. Nedjalkov, H. Kosina, S. Selberherr, and I. Dimov
  Volume 13 (2001), Issue 1-4, Pages 405-411
• Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages, Peiji Zhao, H. L. Cui, D. Woolard, and Fliex Buot
  Volume 13 (2001), Issue 1-4, Pages 413-417
• Detection of Quantum Cellular Automaton Action in Silicon-on-insulator Cells, M. Gattobigio, M. Macucci, and G. Iannaccone
  Volume 13 (2001), Issue 1-4, Pages 419-424
• Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs, E. Amirante, G. Iannaccone, and B. Pellegrini
  Volume 13 (2001), Issue 1-4, Pages 425-429
• Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs, G. Iannaccone and S. Gennai
  Volume 13 (2001), Issue 1-4, Pages 431-434
• Scaling of pHEMTs to Decanano Dimensions, K. Kalna, A. Asenov, K. Elgaid, and I. Thayne
  Volume 13 (2001), Issue 1-4, Pages 435-439
• Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices, J. R. Watling, J. R. Barker, and A. Asenov
  Volume 13 (2001), Issue 1-4, Pages 441-446
• Dynamics of Non-equilibrium Short-wave-length Phonons in Semiconductor Heterostructures, D. A. Romanov, J. Eizenkop, and V. V. Mitin
  Volume 13 (2001), Issue 1-4, Pages 447-451
• Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices, J. R. Barker and J. R. Watling
  Volume 13 (2001), Issue 1-4, Pages 453-458
• Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles, M. Lorenzini, L. Haspeslagh, J. Van Houdt, and H. E. Maes
  Volume 13 (2001), Issue 1-4, Pages 459-463