Volume 6 [80 articles]
All | 1-10 | 11-20 | 21-30 | 31-40 | 41-50 | 51-60 | 61-70 | 71-80
- Single-Electron Parametron, Konstantin K. Likharev and Alexander N. Korotkov
Volume 6 (1998), Issue 1-4, Pages 43-46 - Parallel Computation for Electronic Waves in Quantum Corrals, Henry K. Harbury and Wolfgang Porod
Volume 6 (1998), Issue 1-4, Pages 47-51 - A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers, W.-K. Shih, S. Jallepalli, C.-F. Yeap, M. Rashed, C. M. Maziar, and A. F. Tasch Jr.
Volume 6 (1998), Issue 1-4, Pages 53-56 - SENECA: a New Program for the Analysis of Single-Electron Devices, L. R. C. Fonseca, A. N. Korotkov, and K. K. Likharev
Volume 6 (1998), Issue 1-4, Pages 57-60 - Quantum Contributions and Violations of the Classical Law of Mass Action, H. L. Grubin and T. R. Govindan
Volume 6 (1998), Issue 1-4, Pages 61-64 - One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering
Quantum Mechanical Effects, Rimon Ikeno, Hiroshi Ito, and Kunihiro Asada
Volume 6 (1998), Issue 1-4, Pages 65-67 - Total Dielectric Function Approach
to the Electron Boltzmann Equation for Scattering
from a Two-Dimensional Coupled Mode System, B. A. Sanborn
Volume 6 (1998), Issue 1-4, Pages 69-72 - A Study of Transconductance Degradation in HEMT Using a Self-consistent Boltzmann-Poisson-Schrödinger Solver, R. Khoie
Volume 6 (1998), Issue 1-4, Pages 73-77 - Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes, Joseph W. Parks, Kevin F. Brennan, and Larry E. Tarof
Volume 6 (1998), Issue 1-4, Pages 79-82 - Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics, J. P. Sun and G. I. Haddad
Volume 6 (1998), Issue 1-4, Pages 83-86