Volume 6 [80 articles]
All | 1-10 | 11-20 | 21-30 | 31-40 | 41-50 | 51-60 | 61-70 | 71-80
- Monte Carlo and hydrodynamic simulation
of a one dimensional n+ – n – n+ silicon diode, O. Muscato, R. M. Pidatella, and M. V. Fischetti
Volume 6 (1998), Issue 1-4, Pages 247-250 - A New Self-Consistent 2D Device Simulator Based on
Deterministic Solution of the Boltzmann, Poisson and
Hole-Continuity Equations, Wenchao Liang, Neil Goldsman, and Isaak Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 251-256 - Self-Consistent Solution of the Multi Band Boltzmann,
Poisson and Hole-Continuity Equations, Surinder P. Singh, Neil Goldsman, and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 257-260 - Three-Dimensional Hydrodynamic Modeling
of MOSFET Devices, Daniel C. Kerr, Neil Goldsman, and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 261-265 - 3-D Device Simulation Using Intelligent
Solution Method Control, Daniel C. Kerr and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 267-272 - 3D Parallel Monte Carlo Simulation of GaAs MESFETs, S. Pennathur, Can K. Sandalci, Çetin K. Koç, and S. M. Goodnick
Volume 6 (1998), Issue 1-4, Pages 273-276 - Analysis and Simulation of Extended Hydrodynamic
Models: The Multi-Valley Gunn Oscillator
and MESFET Symmetries, Gui-Qiang Chen, Joseph W. Jerome, and Chi-Wang Shu
Volume 6 (1998), Issue 1-4, Pages 277-282 - Transient Analysis of Silicon Devices Using the Hydrodynamic Model, Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, and Massimo Rudan
Volume 6 (1998), Issue 1-4, Pages 283-286 - Monte Carlo Simulation of a Submicron MOSFET
Including Inversion Layer Quantization, J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, and J. E. Carceller
Volume 6 (1998), Issue 1-4, Pages 287-290 - Non Local Impact Ionization Effects in Semiconductor Devices, Duilio Meglio, Corrado Cianci, Aldo Di Carlo, and Paolo Lugli
Volume 6 (1998), Issue 1-4, Pages 291-297