Volume 6 [80 articles]

• Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization, Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, and Robert W. Dutton
  Volume 6 (1998), Issue 1-4, Pages 299-302
• Statistical Enhancement of Terminal Current Estimation for Monte Carlo Device Simulation, P. D. Yoder, U. Krumbein, K. Gärtner, N. Sasaki, and W. Fichtner
  Volume 6 (1998), Issue 1-4, Pages 303-306
• New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator, J. Jakumeit, U. Ravaioli, and K. Hess
  Volume 6 (1998), Issue 1-4, Pages 307-311
• Numerically Absorbing Boundary Conditions for Quantum Evolution Equations, Anton Arnold
  Volume 6 (1998), Issue 1-4, Pages 313-319
• Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures, Eckehard Schöll
  Volume 6 (1998), Issue 1-4, Pages 321-329
• Studies of Chaotic Transport of Electrons in Quantum Boxes, D. K. Ferry and G. Edwards
  Volume 6 (1998), Issue 1-4, Pages 331-334
• Simulation of Quantum-Dot Structures in Si/SiO₂, Minhan Chen and Wolfgang Porod
  Volume 6 (1998), Issue 1-4, Pages 335-339
• Analysis of Q₀-Independent Single-Electron Systems, Konstantin K. Likharev and Alexander N. Korotkov
  Volume 6 (1998), Issue 1-4, Pages 341-344
• Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System, M. Macucci and K. Hess
  Volume 6 (1998), Issue 1-4, Pages 345-349
• Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering., Leonard F. Register
  Volume 6 (1998), Issue 1-4, Pages 351-353