Volume 6 [80 articles]
All | 1-10 | 11-20 | 21-30 | 31-40 | 41-50 | 51-60 | 61-70 | 71-80
- Guest Editorial, Carl L. Gardner
Volume 6 (1998), Issue 1-4, Pages 1-1 - Quantum Kinetic Transport under High Electric Fields, Nobuyuki Sano and Akira Yoshii
Volume 6 (1998), Issue 1-4, Pages 3-7 - A Generalized Tunneling Formula for Quantum Device Modeling, R. Lake, G. Klimeck, R. C. Bowen, D. Jovanovic, P. Sotirelis, and W. R. Frensley
Volume 6 (1998), Issue 1-4, Pages 9-12 - Monte Carlo Simulation of HEMT based on Self-Consistent Method, H. Ueno, S. Yamakawa, C. Hamaguchi, and K. Miyatsuji
Volume 6 (1998), Issue 1-4, Pages 13-16 - The Quantum Hydrodynamic Smooth Effective Potential, Carl L. Gardner and Christian Ringhofer
Volume 6 (1998), Issue 1-4, Pages 17-20 - Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers, Dragica Vasileska, Terry Eldridge, Paolo Bordone, and David K. Ferry
Volume 6 (1998), Issue 1-4, Pages 21-25 - Electron Mobility and Monte Carlo device simulation of MOSFETs, S. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, and U. Ravaioli
Volume 6 (1998), Issue 1-4, Pages 27-30 - Lattice Effects in the Complex Subband Dispersion of 2DEG Semiconductor Waveguide Structures Subjected to
a Perpendicular Magnetic Field, G. Edwards and D. K. Ferry
Volume 6 (1998), Issue 1-4, Pages 31-34 - Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum
Tunneling of Charge, Christoph Wasshuber and Hans Kosina
Volume 6 (1998), Issue 1-4, Pages 35-38 - Possible Wireless Single-Electron Logic Biased by Electric Field, Alexander N. Korotkov
Volume 6 (1998), Issue 1-4, Pages 39-41 - Single-Electron Parametron, Konstantin K. Likharev and Alexander N. Korotkov
Volume 6 (1998), Issue 1-4, Pages 43-46 - Parallel Computation for Electronic Waves in Quantum Corrals, Henry K. Harbury and Wolfgang Porod
Volume 6 (1998), Issue 1-4, Pages 47-51 - A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers, W.-K. Shih, S. Jallepalli, C.-F. Yeap, M. Rashed, C. M. Maziar, and A. F. Tasch Jr.
Volume 6 (1998), Issue 1-4, Pages 53-56 - SENECA: a New Program for the Analysis of Single-Electron Devices, L. R. C. Fonseca, A. N. Korotkov, and K. K. Likharev
Volume 6 (1998), Issue 1-4, Pages 57-60 - Quantum Contributions and Violations of the Classical Law of Mass Action, H. L. Grubin and T. R. Govindan
Volume 6 (1998), Issue 1-4, Pages 61-64 - One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering
Quantum Mechanical Effects, Rimon Ikeno, Hiroshi Ito, and Kunihiro Asada
Volume 6 (1998), Issue 1-4, Pages 65-67 - Total Dielectric Function Approach
to the Electron Boltzmann Equation for Scattering
from a Two-Dimensional Coupled Mode System, B. A. Sanborn
Volume 6 (1998), Issue 1-4, Pages 69-72 - A Study of Transconductance Degradation in HEMT Using a Self-consistent Boltzmann-Poisson-Schrödinger Solver, R. Khoie
Volume 6 (1998), Issue 1-4, Pages 73-77 - Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes, Joseph W. Parks, Kevin F. Brennan, and Larry E. Tarof
Volume 6 (1998), Issue 1-4, Pages 79-82 - Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics, J. P. Sun and G. I. Haddad
Volume 6 (1998), Issue 1-4, Pages 83-86 - Microscopic Theory of Transconductivity, A. P. Jauho, M. B. Bønsager, K. Flensberg, B. Y.-K. Hu, and J. Kinaret
Volume 6 (1995), Issue 1-4, Pages 87-90 - Topologically Rectangular Grids in the Parallel Simulation
of Semiconductor Devices, A. Asenov, A. R. Brown, S. Roy, and J. R. Barker
Volume 6 (1998), Issue 1-4, Pages 91-95 - Moment Closure Hierarchies for the Boltzmann-Poisson Equation, C. David Levermore
Volume 6 (1998), Issue 1-4, Pages 97-101 - Three-Dimensional S-Matrix Simulation of
Single-Electron Resonant Tunnelling Through Random
Ionised Donor States, Hiroshi Mizuta
Volume 6 (1998), Issue 1-4, Pages 103-106 - Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO), Gerhard Klimeck, Roger K. Lake, R. Chris Bowen, Chenjing L. Fernando, and William R. Frensley
Volume 6 (1998), Issue 1-4, Pages 107-110 - Gridding and Discretization For Divergence Form
(Semiconductor-Like) PDEs, Ming Y. Kao, Donald J. Rose, and Hai Shao
Volume 6 (1998), Issue 1-4, Pages 111-115 - A New Method to Recover Vectorial Electric Fields and
Current Densities from Unstructured Meshes, Daniel C. Kerr and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 117-121 - Distributed Algorithms for Three-dimensional
Semiconductor Device Simulations, Mei-Kei Ieong and Ting-Wei Tang
Volume 6 (1998), Issue 1-4, Pages 123-126 - Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs, S. Babiker, A. Asenov, J. R. Barker, and S. P. Beaumont
Volume 6 (1998), Issue 1-4, Pages 127-130 - 2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices, Zhi-An Shao, Wolfgang Porod, and Craig S. Lent
Volume 6 (1998), Issue 1-4, Pages 131-135 - A Lattice Boltzmann Scheme for Semiconductor Dynamics, S. Succi and P. Vergari
Volume 6 (1998), Issue 1-4, Pages 137-140 - Second Order Newton Iteration Method
and Its Application to MOS Compact Modeling
and Circuit Simulation, Zhiping Yu and Robert W. Dutton
Volume 6 (1998), Issue 1-4, Pages 141-145 - Hierarchy of Full Band Structure Models
for Monte Carlo Simulation, U. Ravaioli, A. Duncan, A. Pacelli, C. Wordelman, and K. Hess
Volume 6 (1998), Issue 1-4, Pages 147-153 - Testing Hydrodynamical Models on the Characteristics of a One-Dimensional Submicrometer Structure, A. M. Anile, O. Muscato, S. Rinaudo, and P. Vergari
Volume 6 (1998), Issue 1-4, Pages 155-160 - Monte Carlo Analysis of Anisotropy in the Transport
Relaxation Times for the Hydrodynamic Model, Rossella Brunetti, Maria Cristina Vecchi, and Massimo Rudan
Volume 6 (1998), Issue 1-4, Pages 161-165 - 2D Monte Carlo Simulation of Hole and Electron
Transport in Strained Si, Gabriele F. Formicone, Dragica Vasileska, and David K. Ferry
Volume 6 (1998), Issue 1-4, Pages 167-171 - Time-Dependent Solution of a Full Hydrodynamic Model
Including Convective Terms and Viscous Effect, Deyin Xu, Ting-Wei Tang, and Sergei S. Kucherenko
Volume 6 (1998), Issue 1-4, Pages 173-176 - Comparison of Non-Parabolic Hydrodynamic Models
Based On Different Band Structure Models, Arlynn W. Smith and Kevin F. Brennan
Volume 6 (1998), Issue 1-4, Pages 177-180 - Hydrodynamic Device Modeling with Band Nonparabolicity, J. Cai, H. L. Cui, E. H. Lenzing, R. Pastore, D. L. Rhodes, and B. S. Perlman
Volume 6 (1998), Issue 1-4, Pages 181-183 - Computation of the Spectral Density of Current
Fluctuations in Bulk Silicon Based on the Solution of the
Boltzmann Transport Equation, Alfredo J. Piazza and Can E. Korman
Volume 6 (1998), Issue 1-4, Pages 185-189 - Hydrodynamic Device Simulation
with New State Variables Specially Chosen for
a Block Gummel Iterative Approach, Wenchao Liang, Daniel C. Kerr, Neil Goldsman, and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 191-195 - Modelling of Hot Acoustic Phonon Propagation in Two
Dimensional Layers, N. A. Bannov, V. V. Mitin, and F. T. Vasko
Volume 6 (1998), Issue 1-4, Pages 197-200 - Numerical Simulation of Heat Removal
from Low Dimensional Nanostructures, V. V. Mitin, N. A. Bannov, R. Mickevičius, and G. Paulavičius
Volume 6 (1998), Issue 1-4, Pages 201-204 - A Hot-Hole Transport Model Based on Spherical
Harmonics Expansion of the Anisotropic Bandstructure, H. Kosina and M. Harrer
Volume 6 (1998), Issue 1-4, Pages 205-208 - An Improved Ionized Impurity Scattering Model for
Monte Carlo Calculations, G. Kaiblinger-Grujin and H. Kosina
Volume 6 (1998), Issue 1-4, Pages 209-212 - A Monte Carlo study ,of Electron Transport in Strained
Si/SiGe Heterostructures, Mahbub Rashed, W.-K. Shih, S. Jallepalli, R. Zaman, T. J. T. Kwan, and C. M. Maziar
Volume 6 (1998), Issue 1-4, Pages 213-216 - A New Concept for Solving the Boltzmann Transport
Equation in Ultra-fast Transient Situations, Ming-C. Cheng
Volume 6 (1998), Issue 1-4, Pages 217-222 - Recent Advances in Device Simulation Using Standard Transport Models, G. Baccarani, M. Rudan, M. Lorenzini, and C. Sala
Volume 6 (1998), Issue 1-4, Pages 223-237 - An Efficient Solution Scheme for the Spherical-Harmonics
Expansion of the Boltzmann Transport Equation Applied
to Two-Dimensional Devices, Maria Cristina Vecchi, Jan Mohring, and Massimo Rudan
Volume 6 (1998), Issue 1-4, Pages 239-242 - A New Approach based on Brownian Motion for the
Simulation of Ultra-Small Semiconductor Devices, Clinton R. Arokianathan, Asen Asenov, and John H. Davies
Volume 6 (1998), Issue 1-4, Pages 243-246 - Monte Carlo and hydrodynamic simulation
of a one dimensional n+ – n – n+ silicon diode, O. Muscato, R. M. Pidatella, and M. V. Fischetti
Volume 6 (1998), Issue 1-4, Pages 247-250 - A New Self-Consistent 2D Device Simulator Based on
Deterministic Solution of the Boltzmann, Poisson and
Hole-Continuity Equations, Wenchao Liang, Neil Goldsman, and Isaak Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 251-256 - Self-Consistent Solution of the Multi Band Boltzmann,
Poisson and Hole-Continuity Equations, Surinder P. Singh, Neil Goldsman, and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 257-260 - Three-Dimensional Hydrodynamic Modeling
of MOSFET Devices, Daniel C. Kerr, Neil Goldsman, and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 261-265 - 3-D Device Simulation Using Intelligent
Solution Method Control, Daniel C. Kerr and Isaak D. Mayergoyz
Volume 6 (1998), Issue 1-4, Pages 267-272 - 3D Parallel Monte Carlo Simulation of GaAs MESFETs, S. Pennathur, Can K. Sandalci, Çetin K. Koç, and S. M. Goodnick
Volume 6 (1998), Issue 1-4, Pages 273-276 - Analysis and Simulation of Extended Hydrodynamic
Models: The Multi-Valley Gunn Oscillator
and MESFET Symmetries, Gui-Qiang Chen, Joseph W. Jerome, and Chi-Wang Shu
Volume 6 (1998), Issue 1-4, Pages 277-282 - Transient Analysis of Silicon Devices Using the Hydrodynamic Model, Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, and Massimo Rudan
Volume 6 (1998), Issue 1-4, Pages 283-286 - Monte Carlo Simulation of a Submicron MOSFET
Including Inversion Layer Quantization, J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, and J. E. Carceller
Volume 6 (1998), Issue 1-4, Pages 287-290 - Non Local Impact Ionization Effects in Semiconductor Devices, Duilio Meglio, Corrado Cianci, Aldo Di Carlo, and Paolo Lugli
Volume 6 (1998), Issue 1-4, Pages 291-297 - Observation of Anomalous Negative Differential
Resistance in Diode Breakdown Simulation Using Carrier
Temperature Dependent Impact Ionization, Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, and Robert W. Dutton
Volume 6 (1998), Issue 1-4, Pages 299-302 - Statistical Enhancement of Terminal Current Estimation for
Monte Carlo Device Simulation, P. D. Yoder, U. Krumbein, K. Gärtner, N. Sasaki, and W. Fichtner
Volume 6 (1998), Issue 1-4, Pages 303-306 - New Approach to Hot Electron Effects in Si-MOSFETs
Based on an Evolutionary Algorithm Using a Monte Carlo
Like Mutation Operator, J. Jakumeit, U. Ravaioli, and K. Hess
Volume 6 (1998), Issue 1-4, Pages 307-311 - Numerically Absorbing Boundary Conditions for Quantum Evolution Equations, Anton Arnold
Volume 6 (1998), Issue 1-4, Pages 313-319 - Modeling Nonlinear and Chaotic Dynamics
in Semiconductor Device Structures, Eckehard Schöll
Volume 6 (1998), Issue 1-4, Pages 321-329 - Studies of Chaotic Transport of Electrons in Quantum Boxes, D. K. Ferry and G. Edwards
Volume 6 (1998), Issue 1-4, Pages 331-334 - Simulation of Quantum-Dot Structures in Si/SiO2, Minhan Chen and Wolfgang Porod
Volume 6 (1998), Issue 1-4, Pages 335-339 - Analysis of Q0-Independent Single-Electron Systems, Konstantin K. Likharev and Alexander N. Korotkov
Volume 6 (1998), Issue 1-4, Pages 341-344 - Corrections to the Capacitance between Two Electrodes
Due to the Presence of Quantum Confined System, M. Macucci and K. Hess
Volume 6 (1998), Issue 1-4, Pages 345-349 - Simulation of Optical Excitation to and Emission
from Electron Fabry-Perot States Subject to Strong
Inelastic Scattering., Leonard F. Register
Volume 6 (1998), Issue 1-4, Pages 351-353 - The Coupled Optoelectronic Problems of Quantum Well
Laser Operation, Matt Grupen and Karl Hess
Volume 6 (1998), Issue 1-4, Pages 355-362 - Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes, D. Z.-Y. Ting and T. C. Mcgill
Volume 6 (1998), Issue 1-4, Pages 363-366 - Gain Calculation in a Quantum Well Laser Simulator
Using an Eight Band k.p Model, F. Oyafuso, P. von Allmen, M. Grupen, and K. Hess
Volume 6 (1998), Issue 1-4, Pages 367-371 - Moving Adaptive Unstructured 3-D Meshes in
Semiconductor Process Modeling Applications, Andrew Kuprat, Denise George, Eldon Linnebur, Harold Trease, and R. Kent Smith
Volume 6 (1998), Issue 1-4, Pages 373-378 - Surface Evolution During Semiconductor Processing, Ganesh Rajagopalan, Vadali Mahadev, and Timothy S. Cale
Volume 6 (1998), Issue 1-4, Pages 379-384 - Hierarchical Process Simulation for Nano-Electronics, Robert W. Dutton and Edwin C. Kan
Volume 6 (1998), Issue 1-4, Pages 385-391 - A Compound Semiconductor Process Simulator and its
Application to Mask Dependent Undercut Etching, Masami Kumagai, Kiyoyuki Yokoyama, and Satoshi Tazawa
Volume 6 (1998), Issue 1-4, Pages 393-397 - The Combination of Equipment Scale and Feature Scale
Models for Chemical Vapor Deposition Via a
Homogenization Technique, Matthias K. Gobbert, Timothy S. Cale, and Christian A. Ringhofer
Volume 6 (1998), Issue 1-4, Pages 399-403 - Beating in the RHEED Intensity Oscillations
during Surfactant Mediated GaAs
Molecular Beam Epitaxy: Process Physics
and Modeling, Vamsee K. Pamula and R. Venkat
Volume 6 (1998), Issue 1-4, Pages 405-408 - Plasma Process Modeling for Integrated Circuits
Manufacturing, M. Meyyappan and T. R. Govindan
Volume 6 (1998), Issue 1-4, Pages 409-412