Volume 8 [92 articles]

Computational Electronics [92 articles]

• Guest Editorial, Wolfgang Porod
  Volume 8 (1998), Issue 1-4, Pages xiii-xiii
• Two-dimensional Carrier Transport in Si MOSFETs, Shin-Ichi Takagi
  Volume 8 (1998), Issue 1-4, Pages 1-11
• Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures, Jeff D. Bude
  Volume 8 (1998), Issue 1-4, Pages 13-19
• Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations, R. W. Kelsall and A. J. Lidsey
  Volume 8 (1998), Issue 1-4, Pages 21-27
• Two-dimensional Modelling of HEMTs Using Multigrids with Quantum Correction, Eric A. B. Cole, Tobias Boettcher, and Christopher M. Snowden
  Volume 8 (1998), Issue 1-4, Pages 29-34
• MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation, Overview and Applications, Mark Peskin and Christine Maziar
  Volume 8 (1998), Issue 1-4, Pages 35-40
• High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models, F. M. Bufler, P. Graf, and B. Meinerzhagen
  Volume 8 (1998), Issue 1-4, Pages 41-45
• Interface Roughness Effects in Ultra-Thin Tunneling Oxides, D. Z.-Y. Ting, Erik S. Daniel, and T. C. Mcgill
  Volume 8 (1998), Issue 1-4, Pages 47-51
• Modeling of Thermal Effects in Semiconductor Structures, Christopher M. Snowden
  Volume 8 (1998), Issue 1-4, Pages 53-58
• Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation, A. Greiner, L. Varani, L. Reggiani, M. C. Vecchi, T. Kuhn, and P. Golinelli
  Volume 8 (1998), Issue 1-4, Pages 59-64
• Molecular Wire Interconnects: Chemical Structural Control, Resonant Tunneling and Length Dependence, Mathieu Kemp, Vladimiro Mujica, Adrian Roitberg, and Mark A. Ratner
  Volume 8 (1998), Issue 1-4, Pages 65-74
• Ionic Channels in Biological Membranes: Natural Nanotubes Described by the Drift-Diffusion Equations, Bob Eisenberg
  Volume 8 (1998), Issue 1-4, Pages 75-78
• Writing Research Software in a Large Group for the NEMO Project, Gerhard Klimeck, Dan Blanks, Roger Lake, R. Chris Bowen, Chenjing L. Fernando, Manhua Leng, William R. Frensley, Dejan Jovanovic, and Paul Sotirelis
  Volume 8 (1998), Issue 1-4, Pages 79-86
• Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers, Benjamin Klein, Leonard F. Register, Karl Hess, and Dennis Deppe
  Volume 8 (1998), Issue 1-4, Pages 87-91
• Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes, G. Zandler, R. Oberhuber, D. Liebig, P. Vogl, M. Saraniti, and P. Lugli
  Volume 8 (1998), Issue 1-4, Pages 93-98
• 3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs, A. R. Brown, A. Asenov, and J. R. Barker
  Volume 8 (1998), Issue 1-4, Pages 99-103
• Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations, A. Trellakis, A. T. Galick, A. Pacelli, and U. Ravaioli
  Volume 8 (1998), Issue 1-4, Pages 105-109
• Cellular Automata Studies of Vertical Silicon Devices, M. Saraniti, G. Zandler, G. Formicone, and S. Goodnick
  Volume 8 (1998), Issue 1-4, Pages 111-115
• X3D Moving Grid Methods for Semiconductor Applications, Andrew Kuprat, David Cartwright, J. Tinka Gammel, Denise George, Brian Kendrick, David Kilcrease, Harold Trease, and Robert Walker
  Volume 8 (1998), Issue 1-4, Pages 117-121
• Multilevel Algorithms for Large-scope Molecular Dynamics Simulations of Nanostructures on Parallel Computers, Aiichiro Nakano, Rajiv K. Kalia, and Priya Vashishta
  Volume 8 (1998), Issue 1-4, Pages 123-128
• Ensemble Monte Carlo and Full-Wave Electrodynamic Models Implemented Self-Consistently on a Parallel Processor Using Perfectly Matched Layer Boundary Conditions, Ik-Sung Lim, Robert O. Grondin, and Samir El-Ghazaly
  Volume 8 (1998), Issue 1-4, Pages 129-133
• Applicability of the High Field Model: An Analytical Study Via Asymptotic Parameters Defining Domain Decomposition, Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome, and Chi-Wang Shu
  Volume 8 (1998), Issue 1-4, Pages 135-141
• Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode, Carl L. Gardner and Christian Ringhofer
  Volume 8 (1998), Issue 1-4, Pages 143-146
• Spherical Harmonic Modeling of a 0.05 μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis, C.-H. Chang, C.-K. Lin, N. Goldsman, and I. D. Mayergoyz
  Volume 8 (1998), Issue 1-4, Pages 147-151
• Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials, Joseph W. Parks Jr., Kevin F. Brennan, and Arlynn W. Smith
  Volume 8 (1998), Issue 1-4, Pages 153-157
• Electronic Structure Calculations Using An Adaptive Wavelet Basis, D. A. Richie, P. von Allmen, K. Hess, and Richard M. Martin
  Volume 8 (1998), Issue 1-4, Pages 159-163
• Open Problems in Quantum Simulation in Ultra-Submicron Devices, D. K. Ferry and J. R. Barker
  Volume 8 (1998), Issue 1-4, Pages 165-172
• Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation, M. V. Fischetti
  Volume 8 (1998), Issue 1-4, Pages 173-178
• Quantum Transport in Open Nanostructures, I. V. Zozoulenko and K.-F. Berggren
  Volume 8 (1998), Issue 1-4, Pages 179-184
• Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of Electron-Phonon Interaction, C. Jacoboni, A. Abramo, P. Bordone, R. Brunetti, and M. Pascoli
  Volume 8 (1998), Issue 1-4, Pages 185-190
• Quantum Networks: Dynamics of Open Nanostructures, Günter Mahler and Rainer Wawer
  Volume 8 (1998), Issue 1-4, Pages 191-196
• A Generalized Monte Carlo Approach for the Analysis of Quantum-Transport Phenomena in Mesoscopic Systems: Interplay Between Coherence and Relaxation, Fausto Rossi, Stefano Ragazzi, Aldo Di Carlo, and Paolo Lugli
  Volume 8 (1998), Issue 1-4, Pages 197-202
• Coherent Control of Light Absorption and Carrier Dynamics in Semiconductor Nanostructures, Walter Pötz and Xuedong Hu
  Volume 8 (1998), Issue 1-4, Pages 203-207
• A New Computational Approach to Photon-Assisted Tunneling in Intense Driving Fields Based on a Fabry-Perot Analogy, Mathias Wagner
  Volume 8 (1998), Issue 1-4, Pages 209-214
• Phase Space Boundary Conditions and Quantum Device Transport, H. L. Grubin, J. R. Caspar, and D. K. Ferry
  Volume 8 (1998), Issue 1-4, Pages 215-217
• Single-Electron Memories, Christoph Wasshuber, Hans Kosina, and Siegfried Selberherr
  Volume 8 (1998), Issue 1-4, Pages 219-223
• Electron-LA Phonon Interaction in a Quantum Dot, T. Ezaki, N. Mori, and C. Hamaguchi
  Volume 8 (1998), Issue 1-4, Pages 225-230
• Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO₂ Quantum Dot, A. Scholze, A. Wettstein, A. Schenk, and W. Fichtner
  Volume 8 (1998), Issue 1-4, Pages 231-235
• An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure, F. A. Buot
  Volume 8 (1998), Issue 1-4, Pages 237-245
• Tunneling Between Multimode Stacked Quantum Wires, M. Macucci, A. T. Galick, and U. Ravaioli
  Volume 8 (1998), Issue 1-4, Pages 247-252
• Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures, F. Gámiz, J. B. Roldán, and J. A. López-Villanueva
  Volume 8 (1998), Issue 1-4, Pages 253-256
• A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization, F. Gámiz, J. B. Roldán, and J. A. López-Villanueva
  Volume 8 (1998), Issue 1-4, Pages 257-260
• Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs, J. B. Roldán, F. Gámiz, and J. A. López-Villanueva
  Volume 8 (1998), Issue 1-4, Pages 261-264
• Quantum Distribution-function Transport Equations in Non-normal Systems and in Ultra-fast Dynamics of Optically-excited Semiconductors, F. A. Buot
  Volume 8 (1998), Issue 1-4, Pages 265-273
• Applicability of the High Field Model: A Preliminary Numerical Study, Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome, and Chi-Wang Shu
  Volume 8 (1998), Issue 1-4, Pages 275-282
• Simulation of Bistable Laser Diodes with lnhomogeneous Excitation, Gang Fang and Ting-Wei Tang
  Volume 8 (1998), Issue 1-4, Pages 283-287
• lntersubband Relaxation in Step Quantum Well Structures, J. P. Sun, H. B. Teng, G. I. Haddad, M. A. Stroscio, and G. J. Iafrate
  Volume 8 (1998), Issue 1-4, Pages 289-293
• Resonances in Conductance Through Tunable Attractors, Yong S. Joe and Ronald M. Cosby
  Volume 8 (1998), Issue 1-4, Pages 295-299
• Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs, D. Vasileska, W. J. Gross, V. Kafedziski, and D. K. Ferry
  Volume 8 (1998), Issue 1-4, Pages 301-305
• Wave Function Scarring Effects in Open Ballistic Quantum Cavities, R. Akis and D. K. Ferry
  Volume 8 (1998), Issue 1-4, Pages 307-312
• Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation, S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont, and J. R. Barker
  Volume 8 (1998), Issue 1-4, Pages 313-317
• Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs, A. Asenov, S. Babiker, S. P. Beaumont, and J. R. Barker
  Volume 8 (1998), Issue 1-4, Pages 319-323
• RF Performance of Si/SiGe MODFETs: A Simulation Study, S. Roy, A. Asenov, S. Babiker, J. R. Barker, and S. P. Beaumont
  Volume 8 (1998), Issue 1-4, Pages 325-330
• Ab-initio Coulomb Scattering in Atomistic Device Simulation, C. R. Arokianathan, J. H. Davies, and A. Asenov
  Volume 8 (1998), Issue 1-4, Pages 331-335
• Numerical Evaluation of Iterative Schemes for Drift-diffusion Simulation, Mahesh B. Patil, Umberto Ravaioli, and Thomas Kerkhoven
  Volume 8 (1998), Issue 1-4, Pages 337-341
• Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method, Jürgen Jakumeit, Amanda Duncan, Umberto Ravaioli, and Karl Hess
  Volume 8 (1998), Issue 1-4, Pages 343-347
• A New HEMT Breakdown Model Incorporating Gate and Thermal Effects, Lutfi Albasha, Christopher M. Snowden, and Roger D. Pollard
  Volume 8 (1998), Issue 1-4, Pages 349-353
• Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes, Stephen Bennett, Christopher M. Snowden, and Stavros Iezekiel
  Volume 8 (1998), Issue 1-4, Pages 355-360
• Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE, Susanna Reggiani, Maria Cristina Vecchi, and Massimo Rudan
  Volume 8 (1998), Issue 1-4, Pages 361-365
• Monte Carlo Simulations of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well, R. W. Kelsall
  Volume 8 (1998), Issue 1-4, Pages 367-373
• Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements, A. Marrocco and Ph. Montarnal
  Volume 8 (1998), Issue 1-4, Pages 375-379
• Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations, Alfredo J. Piazza and Can E. Korman
  Volume 8 (1998), Issue 1-4, Pages 381-385
• Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times, B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, and B. Meinerzhagen
  Volume 8 (1998), Issue 1-4, Pages 387-391
• Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model, Elizabeth J. Brauer, Marek Turowski, and James M. McDonough
  Volume 8 (1998), Issue 1-4, Pages 393-399
• Monte Carlo Simulations of High Field Transport in Electroluminescent Devices, Manfred Dür, Stephen M. Goodnick, Martin Reigrotzki, and Ronald Redmer
  Volume 8 (1998), Issue 1-4, Pages 401-405
• Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System, K. A. Remley, A. Weisshaar, V. K. Tripathi, and S. M. Goodnick
  Volume 8 (1998), Issue 1-4, Pages 407-412
• New “Irreducible Wedge” for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations, John Stanley and Neil Goldsman
  Volume 8 (1998), Issue 1-4, Pages 413-417
• Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior, S. Ramey and R. Khoie
  Volume 8 (1998), Issue 1-4, Pages 419-422
• Hydrodynamic (HD) Simulation of N-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model, Haihong Wang, Wei-Kai Shih, Susan Green, Scott Hareland, Christine M. Maziar, and Al. F. Tasch Jr.
  Volume 8 (1998), Issue 1-4, Pages 423-428
• Study of Electron Velocity Overshoot in NMOS Inversion Layers, Wei-Kai Shih, Srinivas Jallepalli, Mahbub Rashed, Christine M. Maziar, and Al. F. Tasch Jr.
  Volume 8 (1998), Issue 1-4, Pages 429-435
• Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation, T. Okada and K. Horio
  Volume 8 (1998), Issue 1-4, Pages 437-442
• Shell-Filling Effects in Circular Quantum Dots, M. Macucci and Karl Hess
  Volume 8 (1998), Issue 1-4, Pages 443-447
• Modeling of Shot Noise in Resonant Tunneling Structures, G. Iannaccone, M. Macucci, and B. Pellegrini
  Volume 8 (1998), Issue 1-4, Pages 449-453
• Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport, Paul Hasler, Andreas G. Andreou, Chris Diorio, Bradley A. Minch, and Carver A. Mead
  Volume 8 (1998), Issue 1-4, Pages 454-461
• Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator, F. Oyafuso, P. von Allmen, M. Grupen, and K. Hess
  Volume 8 (1998), Issue 1-4, Pages 463-468
• Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations, Andrea Reale, Aldo Di Carlo, Sara Pescetelli, Marco Paciotti, and Paolo Lugli
  Volume 8 (1998), Issue 1-4, Pages 469-473
• Transient Phenomena in High Speed Bipolar Devices, Michael S. Obrecht, Edwin L. Heasell, J. Vlach, and Mohamed I. Elmasry
  Volume 8 (1998), Issue 1-4, Pages 475-480
• Transverse Patterns in the Bistable Resonant Tunneling Systems Under Ballistic Lateral Transport, V. A. Kochelap, B. A. Glavin, and V. V. Mitin
  Volume 8 (1998), Issue 1-4, Pages 481-487
• SPIN – A Schrödinger-Poisson Solver Including Nonparabolic Bands, H. Kosina and C. Troger
  Volume 8 (1998), Issue 1-4, Pages 489-493
• Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models, S. M. Sohel Imtiaz, Samir M. El-Ghazaly, and Robert O. Grondin
  Volume 8 (1998), Issue 1-4, Pages 495-500
• Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices, J.-F. Lin and D. Z.-Y. Ting
  Volume 8 (1998), Issue 1-4, Pages 501-505
• Multiband Quantum Transmitting Boundary Method for Non-orthogonal Basis, G.-C. Liang, Y. A. Lin, D. Z.-Y. Ting, and Y.-C. Chang
  Volume 8 (1998), Issue 1-4, Pages 507-513
• Calibration of a One Dimensional Hydrodynamic Simulator with Monte Carlo Data, O. Muscato, S. Rinaudo, and P. Falsaperla
  Volume 8 (1998), Issue 1-4, Pages 515-520
• Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors, Angelo Marcello Anile, Vittorio Romano, and Giovanni Russo
  Volume 8 (1998), Issue 1-4, Pages 521-525
• A Hydrodynamic Model for Transport in Semiconductors without Free Parameters, P. Falsaperla and M. Trovato
  Volume 8 (1998), Issue 1-4, Pages 527-532
• Modeling of Poly-Silicon Carrier Transport with Explicit Treatment of Grains and Grain Boundaries, Edwin C. Kan and Robert W. Dutton
  Volume 8 (1998), Issue 1-4, Pages 533-537
• Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation, K. Banoo, F. Assad, and M. S. Lundstrom
  Volume 8 (1998), Issue 1-4, Pages 539-544
• A 3D Nonlinear Poisson Solver, Gyula Veszely
  Volume 8 (1998), Issue 1-4, Pages 545-548
• An Alternative Geometry for Quantum Cellular Automata, Paul G. Krause, Rachel M. Mueller, P. Douglas Tougaw, and Janelle M. Weidner
  Volume 8 (1998), Issue 1-4, Pages 549-553
• Electrostatic Formation of Coupled Si/SiO₂ Quantum Dot Systems, Per Hyldgaard, Henry K. Harbury, and Wolfgang Porod
  Volume 8 (1998), Issue 1-4, Pages 555-558
• Electron Transport In One-Dimensional Magnetic Superlattices, Zhen-Li Ji and D. W. L. Sprung
  Volume 8 (1998), Issue 1-4, Pages 559-565
• Boundary Condition for the Modeling of Open-circuited Devices in Non-equilibrium, Joseph W. Parks Jr. and Kevin F. Brennan
  Volume 8 (1998), Issue 1-4, Pages 567-572