Lothar Spieß

Technische Universität Ilmenau, Germany

Lothar Spieß was born 1956 in Merseburg, Germany. Spieß graduated from the Department of Physics and Technology of Electronic Devices, TU Ilmenau, 1977–1982. Spieß did his Diploma work in 1982 and his research study in 1982–1984. Spieß has been employed at the Technical University Ilmenau since 1984.He defended his dissertation in 1985, “Silicides in metallization of integrated circuits of VLSI-technology.” Spieß stayed at the Slovak University of Technology in Bratislava as a Visiting Scientist, 1989–1990 and completed his habilitation in 1990, “Computer added complex solid state analytical for microelectronic materials.” Spieß was an Associate Professor “materials in microelectronic” in 1995. Since 1985, he has been the Head of the Laboratory “structure analysis”, University Ilmenau. In October, 2005, Spieß published a new teaching book (in german) Moderne Röntgenbeugung - Modern X-Ray Diffraction, 2nd Edition, March 12, 2009. Since June, 2007, he has been a Professor and since November, 2007 a Quality Manager of Measurement and Test Center “Layer- and Materials Behavior” of MFPA-Weimar, location: Ilmenau. Spie&#xDF was the Head of Department of Materials for Electronics, 10/2007–03/2008. Spieß has been a Member and Lecturer in radiation protection in Thuringia, Germany, since 1994, a Member of the German Society of Nondestructive Testing Materials (DGzfP), since 2004, a Member of Professional Association Radiation Protection working team “Education”, since 2006, and with the Deputy of Committee of Experts “Materials Characterization”, since November, 2009. Spieß's research field is the analysis of layers and materials with (i) X-ray diffraction; X-ray computer tomography; X-ray fluorescence analysis, (ii) scanning tunneling and atomic force microscopy,(iii) electrical methods, (iv) analytical electron microscopy (SEM, TEM, EDS, EELS, EBSD, and RHEED), and (v) mechanical testing (hardness-Nanointendor, stress tests).

Biography Updated on 9 January 2012

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