Akil K. Sutton

IBM Semiconductor Research and Development Center, USA

Akil K. Sutton was born in March 1981 in the city of Port-of-Spain, Trinidad and Tobago. He enrolled in the Atlanta University Center’s dual-degree engineering program from 1998 to 2003 where he earned B.S. degrees in mathematics and electrical and computer engineering from the Morehouse College and the Georgia Institute of Technology, respectively. He remained at Georgia Tech, completing the Ph.D. degree in electrical and computer engineering and receiving it in August 2009. Sutton joined IBM in May 2009 and serves currently as an Advisory Engineer in the Product-Process Interaction group at IBM’s Semiconductor Research and Development Center (SRDC). He is responsible for the power-performance analysis of analog and mixed-signal circuit blocks in highly scaled bulk and silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technologies. Prior to joining IBM, Sutton held the position of Graduate Research Assistant in the Silicon-Germanium (SiGe) Devices and Circuits group at Georgia Tech. In this position, he was responsible for the development of radiation hardening-by-design (RHBD) techniques in SiGe digital logic circuits, the simulation- and experiment-based validation of SiGe heterojunction bipolar transistor (HBT) charge collection dynamics, and the analysis of source- and temperature-dependent total-dose and displacement-damage effects in SiGe HBTs. Sutton is a Member of the Institute of Electrical and Electronics Engineers (IEEE), the IEEE Nuclear and Plasma Sciences Society (NPSS), the IEEE Electron Devices Society (EDS), Phi Beta Kappa National Honor Society, Eta Kappa Nu Electrical Engineering Honor Society, Tau Beta Pi Engineering Honor Society, and the Pi Mu Epsilon Mathematics Honor Society. Sutton authored or coauthored over 40 conference and journal papers.

Biography Updated on 9 January 2013

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