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International Journal of Microwave Science and Technology
Table of Contents
Special Issues
International Journal of Microwave Science and Technology
/
2011
/
Article
/
Fig 19
/
Research Article
Scalable RFCMOS Model for 90 nm Technology
Figure 19
Model accuracy for NMOSFETs with different
and
of 1
μ
m at
V and
V (a), with different
and
of 2.5
μ
m at
V and
V (b), and with different
and
of 5
μ
m at
V and
V (c).
(a)
(b)
(c)
