Research Article
Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method
Table 1
Deposition parameters employed for the preparation of intrinsic SiC:H films by HW-CVD.
| | Deposition parameter | Value |
| | Deposition pressure () | 200–500 mTorr | | Filament temperature () | 2000°C | | Substrate temperature () | 250°C | | Silane (SiH4) flow rate () | 3.5 sccm | | Methane (CH4) flow rate () | 25 sccm | | Filament to substrate distance () | 4 cm | | Deposition time () | 25 min |
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