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Advances in Chemistry
Volume 2014, Article ID 549019, 5 pages
http://dx.doi.org/10.1155/2014/549019
Research Article

Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

1Research and Development Centre, Bharathiar University, Coimbatore 641046, India
2Department of Physics, St.Thomas College, Pala, Kottayam 686574, India

Received 26 April 2014; Revised 24 June 2014; Accepted 3 July 2014; Published 13 July 2014

Academic Editor: Salah S. Massoud

Copyright © 2014 Deepu Thomas et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002) orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.