Electrical and Optical Properties of Ge_𝑥Si_𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method

Figure 2

Variation of (a) 𝜎_𝑅⋅𝑇 and (b) 𝐸_𝑎 as function of Ge content (𝑥) for a-Ge_𝑥Si_1−𝑥:H thin films at different substrate temperatures.

(a)

(b)