Electrical and Optical Properties of Ge_𝑥Si_𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method

Figure 5

Variation of (a) 𝑛 and (b) 𝑘 with Ge content for pure and doped (3.5%As and 3.5%Al) for a-Ge_𝑥Si_1−𝑥:H films.

(a)

(b)