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Advances in Condensed Matter Physics
Volume 2010, Article ID 428739, 8 pages
http://dx.doi.org/10.1155/2010/428739
Research Article

Electrical and Optical Properties of G e 𝑥 S i 𝟏 𝑥 :H Thin Films Prepared by Thermal Evaporation Method

1Applied Physics Department, College of Sciences, University of Sharjah, P.O. Box 27272 Sharjah, UAE
2Physics Department, College of Sciences, University of Baghdad, P.O. Box 47162, Jadiriyah, Baghdad, Iraq

Received 28 May 2009; Accepted 27 January 2010

Academic Editor: Gayanath Fernando

Copyright © 2010 A. A. J. Al-Douri et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. D. B. Holt, “The growth and structure of epitaxial films and heterojunctions of II-VI compounds,” Thin Solid Films, vol. 24, no. 1, pp. 1–53, 1974. View at Google Scholar · View at Scopus
  2. T. M. Razykov, “Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition,” Thin Solid Films, vol. 164, pp. 301–308, 1988. View at Google Scholar · View at Scopus
  3. P. Wickboldt, D. Pang, W. Paul et al., “High performance glow discharge a-Si1xGex:H of large x,” Journal of Applied Physics, vol. 81, no. 9, pp. 6252–6267, 1997. View at Google Scholar · View at Scopus
  4. Y.-P. Chou and S.-C. Lee, “Structural, optical, and electrical properties of hydrogenated amorphous 11 silicon germanium alloys,” Journal of Applied Physics, vol. 83, no. 8, pp. 4111–4123, 1998. View at Google Scholar · View at Scopus
  5. K. D. MacKenzie, J. R. Eggert, D. J. Leopold, Y. M. Li, S. Lin, and W. Paul, “Structural, electrical, and optical properties of a-Si1xGex:H and an inferred electronic band structure,” Physical Review B, vol. 31, no. 4, pp. 2198–2212, 1985. View at Publisher · View at Google Scholar · View at Scopus
  6. R. C. Chittick, “Properties of glow-discharge deposited amorphous germanium and silicon,” Journal of Non-Crystalline Solids, vol. 3, no. 3, pp. 255–270, 1970. View at Google Scholar · View at Scopus
  7. D. Malinovska, L. Nedialkova, M. Tzolov, and N. Tzenov, in Proceeding of ISES Solar World Congress, p. 131, Budapest, Hungary, 1993.
  8. P. Wickboldt, D. Pang, W. Paul et al., “High performance glow discharge a-Si1xGex:H of large x,” Journal of Applied Physics, vol. 81, no. 9, pp. 6252–6267, 1997. View at Google Scholar · View at Scopus
  9. C. F. O. Graeff and I. Chambouleyron, “Structural and optoelectronic properties of Ge-rich hydrogenated amorphous silicon-germanium alloys,” Journal of Applied Physics, vol. 76, no. 4, pp. 2473–2478, 1994. View at Publisher · View at Google Scholar · View at Scopus
  10. B. G. Budaguan, A. A. Sherchenkov, A. E. Berdnikov, J. W. Metselaar, and A. A. Aivazov, “The properties of a-SiC:H and a-SiGe:H films deposited by 55 kHz PECVD,” in Proceedings of the Materials Research Society Symposium, vol. 557, pp. 43–48, 1999. View at Scopus
  11. A. M. Pérez, C. Zuñiga, F. J. Renero, and A. Torres, “Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4,” Optical Engineering, vol. 44, no. 4, Article ID 04380, 2005. View at Publisher · View at Google Scholar · View at Scopus
  12. A. Fedala, R. Cherfi, M. Aoucher, and T. Mohammed-Brahim, “Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1xGex) deposited by DC magnetron sputtering at high rate,” Materials Science in Semiconductor Processing, vol. 9, no. 4-5, pp. 690–693, 2006. View at Publisher · View at Google Scholar · View at Scopus
  13. J. Yang, A. Banerjee, and S. Guha, “Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies,” Applied Physics Letters, vol. 70, no. 22, pp. 2975–2977, 1997. View at Google Scholar · View at Scopus
  14. X. Deng, X. Liao, S. Han, H. Povolny, and P. Agarwal, “Amorphous silicon and silicon germanium materials for high-efficiency triple-junction solar cells,” Solar Energy Materials and Solar Cells, vol. 62, no. 1, pp. 89–95, 2000. View at Publisher · View at Google Scholar · View at Scopus
  15. M. F. A. Alias, N. N. Rammo, and M. N. Makadsi, “Lattice parameter and density of Ge-Si solid solutions,” Renewable Energy, vol. 24, no. 3-4, pp. 347–351, 2001. View at Publisher · View at Google Scholar · View at Scopus
  16. R. Swanepoel, “Determination of the thickness and optical constants of amorphous silicon,” Journal of Physics E, vol. 16, no. 12, pp. 1214–1222, 1983. View at Publisher · View at Google Scholar · View at Scopus
  17. N. Mott and E. Davis, Electronic Process in Non-Crystalline Materials, Clarendon Press, Oxford, UK, 2nd edition, 1979.
  18. M. F. A. Alias, “The influence of the deposition parameters on the conductivity of a-Si:p Thin Films,” Journal of College Education for Women, vol. 8, no. 1, pp. 127–132, 1997. View at Google Scholar
  19. J. Xu, S. Miyazaki, and M. Hirose, “High-quality hydrogenated amorphous silicon-germanium alloys for narrow bandgap thin film solar cells,” Journal of Non-Crystalline Solids, vol. 208, no. 3, pp. 277–281, 1996. View at Publisher · View at Google Scholar · View at Scopus
  20. M. B. Schubert, H. C. Weller, K. Eberhardt, and G. H. Bauer, “Structural properties of a-Si1xGex:H,” Journal of Non-Crystalline Solids, vol. 114, pp. 528–530, 1989. View at Google Scholar · View at Scopus
  21. J. Tauc, Amorphous and Liquid Semiconductor, Plenum Press, London, UK, 1974.
  22. A. R. Middya and S. Ray, “Influence of deposition rate and hydrogen/helium dilution on the structural relaxation of a-SiGe:H network prepared at low substrate temperature,” Journal of Applied Physics, vol. 75, no. 11, pp. 7340–7348, 1994. View at Publisher · View at Google Scholar