Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes
Figure 6
Temperature dependence of the barrier height for Au/Ni/n-GaN from [16] (symbols), fitted to the theoretical versus (solid lines) computed for field strengths of 1, 5, 9 (MV/m). Note that theoretical is higher at lower fields. The inset shows barrier height versus T from the same work. The continuous curves in the inset correspond to computed by authors of [16] using TE model for the three Gaussian distributions of the barrier height.
