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Advances in Condensed Matter Physics
Volume 2011, Article ID 541318, 6 pages
Research Article

TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers

Department of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan

Received 11 January 2011; Accepted 21 February 2011

Academic Editor: Rosa Lukaszew

Copyright © 2011 Seiji Shiba and Koji Sueoka. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The crack propagation from the indent introduced with a Vickers hardness tester at room temperature and the dislocation nucleation from the cracks at 900°C inside lightly boron (B), heavily B, or heavily arsenic (As) doped Czochralski (CZ) Si wafers were investigated with transmission electron microscopy (TEM) observations. It was found that the dopant concentration and the dopant type did not significantly affect the crack propagation and the dislocation nucleation. The slip dislocations with a density of about (0.82.8) × 1013/cm3 were nucleated from the cracks propagated about 10 μm in depth. Furthermore, small dislocations that nucleated with very high density and without cracks were found around the indent introduced at 1000°C.