The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

Table 1

Values of 𝜌_RT, 𝜎_RT, 𝐸_𝑎1 and 𝐸_𝑎2 for undoped and doped CdTe thin films deposited at RT and 423 K.

CdTe thin film	𝑇𝑠 (K)	𝜌RT×10^7 (Ω·cm)	𝜎RT×10^−6 (Ω^−1·cm^−1)	𝐸𝑎1 (eV)	Temp. range (K)	𝐸𝑎2 (eV)	Temp. range (K)
Undoped	RT	7.692	0.013	0.146	303–363	0.612	363–473
	423	1.961	0.051	0.189	303–363	0.594	363–473
Doped with
0.5% Al	RT	8.333	0.012	0.255	303–363	0.599	363–473
	423	1.449	0.069	0.174	303–353	0.566	353–473
1.5% Al	RT	1.075	0.093	0.189	303–363	0.568	363–473
	423	1.190	0.084	0.105	303–343	0.562	343–473
2.5% Al	RT	0.150	0.668	0.272	303–353	0.475	353–473
	423	1.064	0.094	0.154	303–353	0.532	353–473
0.5% Sb	RT	0.725	0.138	0.288	303–363	0.574	363–473
	423	1.961	0.051	0.209	303–363	0.573	363–473
1.5% Sb	RT	0.142	0.704	0.246	303–363	0.519	363–473
	423	0.252	0.397	0.175	303–343	0.538	343–473
2.5% Sb	RT	0.040	2.506	0.242	303–403	0.414	403–473
	423	0.056	1.796	0.271	303–363	0.505	363–473