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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 145689, 7 pages
http://dx.doi.org/10.1155/2012/145689
Research Article

High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers

Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan

Received 27 August 2012; Accepted 27 September 2012

Academic Editor: Donghui Li

Copyright © 2012 Ya-Fen Wu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ya-Fen Wu, “High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers,” Advances in Condensed Matter Physics, vol. 2012, Article ID 145689, 7 pages, 2012. doi:10.1155/2012/145689